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        MXD3080K

        •     These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

              These devices are well suited for high efficiency fast switching applications.
          MXD3080K Description:
              These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
              These devices are well suited for high efficiency fast switching applications.

          MXD3080K Features:
          VDS=30V, ID=80A
          RDS(ON)(Typ.)=3.7mΩ@VGS=10V
          RDS(ON)(Typ.)=6mΩ@VGS=4.5V
          Improved dv/dt capability
          100% EAS Guaranteed
          Fast switching

          MXD3080K Application:
          NB / VGA / VCORE
          POL Applications
          SMPS 2nd SR

          MXD3080K Pinout:

          MXD3080K Ordering Information:
          Part Number
          StorageTemperature
          Package
          Devices Per Reel
          MXD3080K
          -55°C to 150°C
          TO-252
          -

          咨詢:MXD3080K
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