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        Mosfet類
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        PE8260M

        •  PE8260M是VDS=20V,ID=22A,RDS(ON)<4m?@VGS=4.5V,RDS(ON)<5.4m?@VGS=2.5V的N-Channel Enhancement Mode Power MOSFET.

          PE8260M的絲印是PE8260M.

          PE8260M提供PDFN3.3x3.3-8L封裝.


          PE8260M概述:
              PE8260M是VDS=20V,ID=22A,RDS(ON)<4m?,@VGS=4.5V,RDS(ON)<5.4m?,@VGS=2.5V的N-Channel Enhancement Mode Power MOSFET.PE8260M的絲印是PE8260M.PE8260M提供PDFN3.3x3.3-8L封裝.
              The PE8260M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.


          PE8260M特性:
          VDS = 20V, ID = 22A
          RDS(ON) < 4m? @ VGS=4.5V
          RDS(ON) < 5.4m? @VGS=2.5V
          High Power and current handing capability
          Lead free product is acquired
          Surface Mount Package


          PE8260M應(yīng)用:
          PWM applications
          Load switch


          PE8260M典型應(yīng)用及引腳:

          咨詢:PE8260M
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