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        PE8209HN
        
                
          
                  
        • PE8209HN是VDS=18V，ID=9A，RDS(ON)<11m?，@VGS=4.5V，RDS(ON)<12m?，@VGS=3.8V，RDS(ON)<14m?，@VGS=3.1V RDS(ON)<16m?，@VGS=2.5V的N-Channel Enhancement Mode Power MOSFET.
          

          
PE8209HN的絲印是8209.
          

          
PE8209HN提供DFN2x3-6L封裝.
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PE8209HN概述：
          

              PE8209HN是VDS=18V,ID=9A，RDS(ON)<11m?，@VGS=4.5V，RDS(ON)<12m?，@VGS=3.8V，RDS(ON)<14m?，@VGS=3.1V RDS(ON)<16m?，@VGS=2.5V的N-Channel Enhancement Mode Power MOSFET.PE8209HN的絲印是8209.PE8209HN提供DFN2x3-6L封裝.
          

              The PE8209HN uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.
          

          

          


          

          
PE8209HN特性：
          

          VDS = 18V, ID = 9A
          

          RDS(ON) < 11m? @VGS=4.5V
          

          RDS(ON) < 12m? @VGS=3.8V
          

          RDS(ON) < 14m? @VGS=3.1V
          

          RDS(ON) < 16m? @VGS=2.5V
          

          ESD Rating: 4000V HBM
          

          High Power and current handing capability
          

          Lead free product is acquired
          

          Surface Mount Package
          

          

          


          

          
PE8209HN應(yīng)用：
          

          PWM applications
          

          Load switch
          

          Power management
          

          

          


          

          
PE8209HN典型應(yīng)用及引腳：
          

          

          
			
          
		
        
        
        
          
		
           
          
          
          
            
           咨詢：PE8209HN
          
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