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        Mosfet類
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        PE58200PA

        •     PE58200PA是VDS=85V,ID=200A,RDS(ON)<3.2m?,@VGS=10V的N-Channel Enhancement Mode Power MOSFET.

              PE58200PA的絲印是PE58200P.

              PE58200PA提供TO-263封裝.


          PE58200PA概述:
              PE58200PA是VDS=85V,ID=200A,RDS(ON)<3.2m?,@VGS=10V的N-Channel Enhancement Mode Power MOSFET.PE58200PA的絲印是PE58200P.PE58200PA提供TO-263封裝.
              The PE58200PA uses deep trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

          PE58200PA特性:
          VDS = 85V, ID = 200A
          RDS(ON) < 3.2m? @VGS=10V
          High Power and current handing capability
          Lead free product is acquired
          Surface Mount Package

          PE58200PA應用:
          PWM applications
          Load switch
          Power management

          PE58200PA典型應用及引腳:

          咨詢:PE58200PA
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