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        PE2012T
        
                
          
                  
        • PE2012T是VDS=18V，ID=12A，RDS(ON)<11m?，@VGS=4.5V，RDS(ON)<12m?，@VGS=3.8VRDS(ON)<13m?，@VGS=2.5V的N-Channel Enhancement Mode Power MOSFET.
          

          
PE2012T提供TSSOP-8封裝.
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          PE2012T規(guī)格書下載
          


          
PE2012T概述：
          
    PE2012T是VDS=18V,ID=12A，RDS(ON)<11m?，@VGS=4.5V，RDS(ON)<12m?，@VGS=3.8VRDS(ON)<13m?，@VGS=2.5V的N-Channel Enhancement Mode Power MOSFET.PE2012T提供TSSOP-8封裝.
          
    The PE2012T uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
          


          
PE2012T特性：
          
VDS = 18V, ID = 12A
          
RDS(ON) < 11m? @ VGS=4.5V
          
RDS(ON) < 12m? @VGS=3.8V
          
RDS(ON) < 13m? @VGS=2.5V
          

          High Power and current handing capability
          
Lead free product is acquired
          
Surface Mount Package
          


          
PE2012T應(yīng)用：
          
Battery Protection
          
Load switch
          


          
PE2012T典型應(yīng)用及引腳：
          

          
			
          
		
        
        
        
          
		
           
          
          
          
            
           咨詢：PE2012T
          
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