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        MXND805
        
                
          
                  
        • MXND805是VDS=-12V，ID=-8.5A，@VGS=-4.5V，RDS(ON)(Typ.)=14m?，@VGS=-2.5V，RDS(ON)(Typ.)=19m?，@VGS=-1.8V，RDS(ON)(Typ.)=29m?的P-Channel MOSFET.
          

          
MXND805提供DFN2x2-6L封裝.
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          MXND805規(guī)格書下載
          


          
MXND805概述：
          
    MXND805是VDS=-12V，ID=-8.5A，@VGS=-4.5V，RDS(ON)(Typ.)=14m?，@VGS=-2.5V，RDS(ON)(Typ.)=19m?，@VGS=-1.8V，RDS(ON)(Typ.)=29m?的P-Channel MOSFET.MXND805提供DFN2x2-6L封裝.
          
    The MXND805 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as aload switching applications and a wide variety of other applications.
          


          
MXND805特性：
          
VDS =-12V，ID =-8.5A
          
@VGS=-4.5V RDS(ON)(Typ.)=14m?
          
@VGS=-2.5V RDS(ON)(Typ.)=19m?
          
@VGS=-1.8V RDS(ON)(Typ.)=29m?
          

          Asvanced trench MOSFET process technology
          
Ultra low on-resistance with low gate charge
          
New Thermally Enhanced DFN2X2-6L Package
          


          
MXND805應(yīng)用：
          
PWM applications
          
Load switch
          
battery charge in cellular handset
          


          
MXND805典型應(yīng)用及引腳：
          

          
			
          
		
        
        
        
          
		
           
          
          
          
            
           咨詢：MXND805
          
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