MXN3016M概述：
MXN3016M是30V45A的N溝道增強(qiáng)型功率MOSFET,MXN3016M絲?。?016M,MXN3016M提供PDFN3X3-8L封裝。
MXN3016M uses advanced trench technology to provide excellent RDS(ON) and low gate charge . This device can be used for a variety of applications，VDS =30V，ID=45A，
@VGS=10V RDS(ON)(Typ.)=5m?，@VGS=4.5V RDS(ON)(Typ.)=7m?，High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation Special process technology for high ESD capability，MXN3016M絲印：3016M,MXN3016M提供PDFN3X3-8L封裝。
MXN3016M特性:
VDS =30V，ID =45A
@VGS=10V RDS(ON)(Typ.)=5m?
@VGS=4.5V RDS(ON)(Typ.)=7m?
High density cell design for ultra low Rdson
Fully characterized Avalanche voltage and current
Good stability and uniformity with high EAS Excellent package for good heat dissipation
Special process technology for high ESD capability
MXN3016M絲?。?016M
MXN3016M提供PDFN3X3-8L封裝。
MXN3016M應(yīng)用：
DC/DC Converters in Computing, Servers, and POL
Isolated DC/DC Converters in Telecom and Industrial
Uninterruptible Power Supply
MXN3016M典型應(yīng)用電路圖：
