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        Mosfet類
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        PE82H2G

        •     PE82H2G是20V120A的N溝道增強型功率MOSFET

              DS=18V ID=120ARDS(ON)<2.1m? @ VGS=4.5VRDS(ON)<2.5m?@VGS=2.5VESD Rating: 4000V HBM.

              PE82H2G絲印:PE82H2G,PE82H2G提供DFN5x6-8L封裝


          PE82H2G概述:

          PE82H2G是20V,120A的N溝道增強型功率MOSFET,VDS=18V, ID=120A,RDS(ON)<2.1m? @ VGS=4.5V,RDS(ON)<2.5m?@VGS=2.5V,ESD Rating: 4000V HBM.PE82H2G絲?。篜E82H2G,PE82H2G提供DFN5x6-8L封裝。The PE82H2G uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected。V

          PE82H2G特性:
          VDS= 8V, ID=120A
           RDS(ON)<2.1m? @ VGS=4.5V
           RDS(ON)<2.5m? @VGS=2.5V
           ESD Rating: 4000V HBM
          High Power and current handing capability
          Lead free product is acquired
          Surface Mount Package

          PE82H2G應(yīng)用:
          Battery management
          PWM
          Load switch
          Uninterruptible power supply

          PE82H2G典型應(yīng)用電路圖、絲印圖、封裝圖:

          咨詢:PE82H2G
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