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        AKT2055Q

        • 20V N-channel enhancement mode MOSFET

          Features:
          Extremely Low RDS(on):
              Typ.RDS(on) = 3.1 mΩ @VGS=4.5 V, Id=30 A
          Good stability and uniformity
          100% avalanche tested
          Excellent package for good heat dissipation
          AKT2055Q General Description:
              The AKT2055Q uses advanced trench technology to provide excellent RDS(ON), low gate charge This device is suitable for use in Load Switch,PWM Application,Power management and general purpose applications.

          AKT2055Q Features:
          Extremely Low RDS(on):
              Typ.RDS(on) = 3.1 mΩ @VGS=4.5 V, Id=30 A
          Good stability and uniformity
          100% avalanche tested
          Excellent package for good heat dissipation

          AKT2055Q Schematic:



          咨詢:AKT2055Q
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